We of 3.2×105 Am-2 K-2 for p-Si. The

We
have investigated the detailed mechanism of resistive switching across the interface
formed between n-TiO2 and p-Si in the heterostructure Al/n-TiO2/p-Si/Al
in the temperature range from 80K-300K. The heterostructure was fabricated by
pulsed laser ablation process on boron doped p-type semiconductor. The
morphological study revealed the uniformly grown TiO2 nanolayer
while structural characterizations confirmed the crystallinity and purity of
the grown nanolayer with a strong (210) plane as the preferred direction.
Highly pure aluminum metal was deposited by thermal coating system to make the
contacts to n-TiO2 and p-Si, respectively. The current–voltage (I–V)
characteristics of the fabricated heterostructure clearly illustrates the
rectifying properties of the of the heterostructure due to the interface band
discontinuity and formation of depleted region. The current transport
mechanisms are strong functions of temperature and successfully explained using
thermionic emission diffusion (TED) mechanism with Gaussian distributions of
barrier heights. The experimental I-V characteristics of the herterostructure
have shown a double gaussian distribution having mean barrier heights  …….…and ……..and standard deviation ….….and …….respectively  (pp263). The temperature dependence of zero biased
barrier heights, ideality factor and activation energy have been explained on
the basis of inhomogeneities in the heterostructure. The modified    vs   plot
gives      and Richardson,s coefficient  as ………and ……..and…….and………respectively(pp263).
The
observed two temperature regimes in Richardson’s plot could be well explained
by assuming two separate Gaussian distribution of the barrier heights. The
value of effective Richardson’s constant ……..Am-2K-2  is of the order of known theoretical value of
3.2×105 Am-2 K-2 for p-Si. The barrier heights as a function of temperature also
extracted from reverse biased capacitance-voltage (C-V) characteristics. However,
the C-V analysis did not match with the I-V analysis and the discrepancy between
the barrier heights calculated from both the techniques has been explained by
assuming the existence of barrier inhomogeneities and tunneling factor in the
current transport mechanisms. The optical band gap energy of TiO2 thin films
was studied using UV-VIS spectroscopy and Tauc plots, which comes out to be 3.20eV.
The obtained results showed that n-TiO2/p-Si heterojunction diode is a good
candidate for the applications of semiconductor electronic devices.We
have investigated the detailed mechanism of resistive switching across the interface
formed between n-TiO2 and p-Si in the heterostructure Al/n-TiO2/p-Si/Al
in the temperature range from 80K-300K. The heterostructure was fabricated by
pulsed laser ablation process on boron doped p-type semiconductor. The
morphological study revealed the uniformly grown TiO2 nanolayer
while structural characterizations confirmed the crystallinity and purity of
the grown nanolayer with a strong (210) plane as the preferred direction.
Highly pure aluminum metal was deposited by thermal coating system to make the
contacts to n-TiO2 and p-Si, respectively. The current–voltage (I–V)
characteristics of the fabricated heterostructure clearly illustrates the
rectifying properties of the of the heterostructure due to the interface band
discontinuity and formation of depleted region. The current transport
mechanisms are strong functions of temperature and successfully explained using
thermionic emission diffusion (TED) mechanism with Gaussian distributions of
barrier heights. The experimental I-V characteristics of the herterostructure
have shown a double gaussian distribution having mean barrier heights  …….…and ……..and standard deviation ….….and …….respectively  (pp263). The temperature dependence of zero biased
barrier heights, ideality factor and activation energy have been explained on
the basis of inhomogeneities in the heterostructure. The modified    vs   plot
gives      and Richardson,s coefficient  as ………and ……..and…….and………respectively(pp263).
The
observed two temperature regimes in Richardson’s plot could be well explained
by assuming two separate Gaussian distribution of the barrier heights. The
value of effective Richardson’s constant ……..Am-2K-2  is of the order of known theoretical value of
3.2×105 Am-2 K-2 for p-Si. The barrier heights as a function of temperature also
extracted from reverse biased capacitance-voltage (C-V) characteristics. However,
the C-V analysis did not match with the I-V analysis and the discrepancy between
the barrier heights calculated from both the techniques has been explained by
assuming the existence of barrier inhomogeneities and tunneling factor in the
current transport mechanisms. The optical band gap energy of TiO2 thin films
was studied using UV-VIS spectroscopy and Tauc plots, which comes out to be 3.20eV.
The obtained results showed that n-TiO2/p-Si heterojunction diode is a good
candidate for the applications of semiconductor electronic devices.